| 1. | The internal resistance of a current source used in the model of BJT while analysing a circuit using BJT is ? | |
|
very low
|
||
|
of the order of a few mega-ohms
|
||
|
zero
|
||
|
very high
|
||
View Answer
Discuss in Forum
Report Question| 2. | Which one of the following statements is not correct ? | |
|
Reverse saturation current of a silicon diode is much smaller than that of a germanium diode
|
||
|
The cut-in voltage of silicon diode is larger than that of germanium
|
||
|
Reverse saturation current in a BJT approximately doubles for every 10°C rise in temperature
|
||
|
The reverse resistance of a junction diode increases with increase in temperature
|
||
| 3. | An N-type FET is never operated with positive gate voltage w.r.t. the source because ? | |
|
drain current does not increase
|
||
|
gate to source current is to be avoided
|
||
|
drain current becomes very high
|
||
|
none
|
||
| 4. | Which one of the following specifications is not correct for a common collector amplifier amplifier ? | |
|
Low input impedance
|
||
|
High Input impedance
|
||
|
High current gain
|
||
|
High voltage gain
|
||
| 5. | The current ICBO flows in the ? | |
|
emitter and collector leads
|
||
|
emitter and base leads
|
||
|
collector and base leads
|
||
|
none of these
|
||
| 6. | Which of the following does not show non-linear V-I characteristics ? | |
|
Thermister, at a fixed temperature
|
||
|
Schottky diode
|
||
|
Tunnel diode
|
||
|
p-n junction diode
|
||
| 7. | The Ip/Iv ratio of a tunnel diode is of primary importance in ? | |
|
computer applications
|
||
|
amplifier designing
|
||
|
determining tunneling speed of electrons
|
||
|
the design of an oscillator
|
||
| 8. | Consider the following statements: Impurity diffusion is used in semiconductor to control the conductivity. The nature of the impurity profile should be such that the 1. impurity concentration decreases with diffusion depth. 2 profile results in an internal electric field. 3. impurity concentration is homogeneous with no internal electric field. Which of these statements are correct ? | |
|
1 and 2
|
||
|
2 and 3
|
||
|
1 and 3
|
||
|
1, 2 and 3
|
||
| 9. | Avalanche breakdown is primarily dependent on the phenomenon of ? | |
|
doping
|
||
|
recombination
|
||
|
collision
|
||
|
ionization
|
||
| 10. | Avalanche multiplication ? | |
|
direct rupture bonds
|
||
|
disruption of covalent bonds occurs by collision
|
||
|
both (a) and (b)
|
||
|
none of the above
|
||