| 1. | Which of the following statements is not correct regarding h parameters of transistor ? | |
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values depend on transistor configuration
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values of h-parameter cannot be obtained from transistor characteristics
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values depend on operating point
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they are four in number
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Report Question| 2. | The phenomenon known as "Early Effect" in a bipolar transistor refers to a reduction of the effective base-width caused by ? | |
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the forward biasing of emitter-base junction
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electron-hole recombination at the base
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the early removal of stored base charge during saturation-to cutoff switching
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the reverse biasing of the base-collector junction
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| 3. | An incremental model of a solid state device is one which represents the ? | |
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ac property of the device at all operating points
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complete ac and dc behaviour of the device at all operating points
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ac property of the device at the desired operating point
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dc property of the device at all operating points
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| 4. | Which one of the following statements with reference to effective mass is incorrect ? | |
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Its concept is applicable only to electrons and not to holes
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It is different from free mass because of lattice interaction
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It can be positive or negative
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It is a function of wave vector K
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| 5. | Consider the following statements pertaining to tunnel diodes: 1. Impurity concentration is high. 2 Carrier velocities are low. 3. They have current-controlled V-I characteristic. Which of the statements given above is/are correct ? | |
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2 and 3 only
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1 only
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1 and 2 only
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1 and 3 only
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| 6. | Consider the following statements for a p-n junction diode: 1. It is an active component. 2. Depletion layer width decreases with forward biasing. 3. In the reverse biasing case, saturation current increases with increasing temperature. Which of the statements given above are correct ? | |
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1 and 2 only
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1 and 3 only
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1,2 and 3
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2 and 3 only
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| 7. | Consider the following statements: A tunnel diode is 1. made of Ge or GaAs 2 an abrupt junction with both sides heavily doped. 3. a hyper abrupt junction with both sides heavily doped. 4. majority carrier device. Which of these statements are correct ? | |
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3 and 4
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1 and 2
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1,2 and 4
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1,3 and 4
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| 8. | If for a silicon n-p-n transistor, the base-to-emitter voltage (VB) is 0.7 V and the collector-to-base voltage (Ven) is 0.2 V. then the transistor is operating in the ? | |
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saturation mode
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normal active mode
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cutoff mode
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inverse active mode
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| 9. | A bipolar junction transistor with forward current transfer ratio ?=0.98, when working in CE mode, provides current transfer ratio Beta as ? | |
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0.49
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0.02
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98
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49
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| 10. | Which one of following statements is correct, In a transistor ? | |
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Iceo is equal to Loo and doubles for every 10 degrees rise in temperature
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Icbo is equal to Ico and doubles for every 10 degrees rise in temperature
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Icbo is greater than Ico and doubles for every 10 degrees rise in temperature
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Icbo is greater than Iceo and does not depend upon temperature
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