| 1. | Which of the following are true for h-parameters of transistors 1. They are real numbers at audio frequencies. 2 They are easy to measure. 3. They vary widely with temperature. Select the correct answer using the codes given below ? | |
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1 and 3 only
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2 and 3 only
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1,2 and 3
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1 and 2 only
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Report Question| 2. | N-channel FETs are superior to P-channel FETs because they have ? | |
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mobility of electrons in N-channel is greater than mobility of holes in P-channel
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higher input impedance
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lower pinch-off voltage
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lower switching time
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| 3. | Thermal runaway is not encountered in FETs because ? | |
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the mobility of the carriers increases with increase in temperature
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IDS has a zero temperature coefficient
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IDS has a negative temperature coefficient
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IDS has a positive temperature coefficient
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| 4. | How is an N-channel junction field effect transistor operated as an amplifier ? | |
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With a shorted gate-source junction
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With an open gate-source junction
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With a forward bias gate-source junction
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With a reverse bias gate-source junction
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| 5. | What is the correct sequence of the following steps in the fabrication of a monolithic, bipolar junction transistor? 1. Emitter diffusion 2. Base diffusion 3. Buried layer formation 4. Epi-layer formation. Select the correct answer using the codes given below: Codes: ? | |
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3, 4, 2, 1
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4,3,2,1
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4,3,1,2
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3,4, 1, 2
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| 6. | Diffusion of impurities in a semiconductor is carried out in a farmace through which a steady stream of impurity atoms is passed during the entire diffusion process. What would be the type of profile of the impurity stoms inside the semiconductor ? | |
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Gaussian
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Exponential
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Linear
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Complementary error function
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| 7. | The p-type substrate in a conventional pn-junction isolated integrated circuit should be connected to ? | |
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the most negative potential available in the circuit
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the most positive potential available in the circuit
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a dc ground potential
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nowhere, i.e. left floating
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| 8. | The p-type epitaxial layer grown over an n-type substrate for fabricating a bipolar transistor will function as ? | |
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the collector contact for a p-n-p transistor
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the emitter of a p-n-p transistor
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the collector of p-n-p transistor
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the base of an n-p-n transistor
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| 9. | In fabricating silicon BJT in ICs by the epitaxial process, the number of diffusions used is usually ? | |
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4
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2
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6
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3
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| 10. | The commercial temperature range of ICs is ? | |
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-25°C to 85°C
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0-100°C
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-55°C to 125°C
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0-70°C
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