| 1. | For an n-channel enhancement type MOSFET, if the source is connected at a higher potential than that of the bulk (i.e. Vs>0). the threshold voltage V, of the MOSFET will ? | |
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increase
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remain unchanged
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change polarity
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decrease
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Report Question| 2. | Most important advantage of an IC is its ? | |
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extremely small weight
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extremely small size
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extremely high reliability
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very low cost
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| 3. | Ultraviolet radiation is used in IC fabrication process for ? | |
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isolation
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diffusion
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masking
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metalization
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| 4. | In the fabrication of n-p-n transistor in an IC. the buried layer the p-type substrate is ? | |
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n-doped
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used to reduce the parasitic capacitance
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located in the emitter region
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p-doped
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| 5. | One of the following materials is not used as substrate for the fabricating of MICS ? | |
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Berrylia
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Garret
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NiCr
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Glass
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| 6. | The process of extension of a single-crystal surface by growing a film in such a way that the added atoms form a continuation of the single-crystal structure is called ? | |
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electroplating
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chemical vapour depiction
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Epitaxy
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on Implantation
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| 7. | In switching diode fabrication, a dopant is introduced into silicon which introduces additional trap levels in the material thereby reducing the mean life time of carriers. This dopant is ? | |
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Copper
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Gold
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Platinum
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Aluminium
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| 8. | Two identical FETs, each characterised by the parameters gm and rd are connected in parallel. The composite FET is then characterised by the parameters ? | |
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2gm, and 2rd
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2gm, and rd/2
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gm/2 and 2rd
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gm/2 and rd/2
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| 9. | In a JFET, transconductance, gm is of the order of ? | |
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1s
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100 s
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1 ms
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100 ms
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| 10. | The small value of drain-to-source voltage, JFET behaves like a ? | |
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negative resistance
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constant voltage source
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resistor
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constant current source
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