| 1. | The main reason why electrons can tunnel through a P-N junction is that ? | |
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depletion layer is extremely thin
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impurity level is low
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barrier potential is very low
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they have high energy
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Report Question| 2. | In an N-P-N transistor, the leakage current is due to ? | |
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flow of minority carriers from collector to emitter
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flow of holes from collector to base
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flow of electrons from collector to base
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flow of holes from base to emitter
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| 3. | The Early Effect in a bipolar junction transistor is caused by ? | |
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large emitter-base forward bias
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fast turn-on
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fast turn-off
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large collector-base reverse bias
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| 4. | A bipolar junction transistor has a common base forward short circuit current gain of 0.99. Its common emitter forward short circuit current gain will be ? | |
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100
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50
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99
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200
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| 5. | The transistor configuration which provides highest output impedance is ? | |
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Common Emitter
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Common Collector
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Common Base
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None of the above
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| 6. | A step-recovery diode ? | |
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is mainly used as a harmonic generator
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has an extremely short recovery time
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is an ideal rectifier of high frequency signals
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conducts equally well in both directions
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| 7. | The following is not an application of varactor diode ? | |
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Voltage controlled oscillator
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Phase shifter
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Frequency tuner
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Parametric amplifier
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| 8. | An emitter in a bipolar junction transistor is doped much more heavily than the base as it increases the ? | |
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base transport factor
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forward current gain
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emitter efficiency
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all the three given above
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| 9. | Two P-N junction diodes are connected back to back to make a transistor. Which one of the following is correct ? | |
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the current gain of such a transistor will be moderate
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the current gain of such a transistor will be high
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it can be used only for PNP transistor
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it cannot be used as a transistor due to large base width
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| 10. | In cutoff region in an N-P-N transistor ? | |
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VCB is -ve and VBE is +ve
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VCB is +ve and VBE is-ve
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Both VCB and VBE are negative
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Both VCB and VBE are positive
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