| 1. | Silicon is preferred for manufacturing zener diodes because it ? | |
|
has lower breakdown voltage
|
||
|
has high temperature and current capacity
|
||
|
is relatively cheap
|
||
|
needs lower doping level
|
||
View Answer
Discuss in Forum
Report Question| 2. | Zener diode is used as the main component in de power supply for ? | |
|
voltage regulation
|
||
|
rectification
|
||
|
both (a) and (b)
|
||
|
filter action
|
||
| 3. | When a Junction diode is used in switching applications, the forward recovery time is ? | |
|
greater than the reverse recovery time
|
||
|
Equal to the mean carrier lifetime T for the excess minority carriers
|
||
|
of the order of the reverse time
|
||
|
negligible in comparison to the reverse recovery time
|
||
| 4. | A Zener diode, when used in voltage stabilization circuits, is biased in ? | |
|
forward bias region
|
||
|
reverse bias region below the breakdown voltage
|
||
|
reverse breakdown region
|
||
|
forward bias constant current mode
|
||
| 5. | A tunnel diode is ? | |
|
a slow switching device
|
||
|
a very heavily doped p-n junction diode
|
||
|
high resistivity p-n junction diode
|
||
|
an amplifying device
|
||
| 6. | Which junction has least junction capacitance ? | |
|
Alloy
|
||
|
Grown
|
||
|
Point contact
|
||
|
Diffused
|
||
| 7. | The junction capacitance of a p-n junction depends on ? | |
|
doping concentration only
|
||
|
both doping concentration and applied voltage
|
||
|
applied voltage only
|
||
|
barrier potential only
|
||
| 8. | The diffusion capacitance of a p-n junction diode ? | |
|
decreases exponentially with forward bias voltage
|
||
|
increases exponentially with forward bias voltage
|
||
|
increases linearly with forward bias voltage
|
||
|
decreases linearly with forward bias voltage
|
||
| 9. | For small signal se operation, a practical forward biased be modelled ? | |
|
a resistance
|
||
|
a resistance and an ideal diode in series
|
||
|
a resistance and a capacitance in series
|
||
|
an ideal diode and resistance in parallel
|
||
| 10. | The I-V characteristics of a tunnel diode exhibit ? | |
|
current-controlled positive resistance
|
||
|
temperature-controlled positive resistance
|
||
|
current-controlled negative resistance
|
||
|
voltage-control negative resistance
|
||