| 1. | The reverse bias breakdown of high speed silicon transistors is due to ? | |
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zener breakdown mechanism at both the junctions
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zener breakdown mechanism at base-emitter junction and avalanche breakdown mechanism at base-collector junction
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avalanche breakdown mechanism at both the junctions
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zener breakdown mechanism at base-collector junction and avalanche breakdown mechanism at base-emitter junction
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Report Question| 2. | When a transistor is used in switching mode then what is the turn on time ? | |
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Sum of rise time and fall time
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Sum of delay time and rise time
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Sum of delay time and storage time
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Sum of rise time and storage time
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| 3. | The action of a JFET in its equivalent circuit can best be represented ? | |
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Voltage Controlled Voltage Source
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Voltage Controlled Current Source
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Current Controlled Voltage Source
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Current Controlled Current Source
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| 4. | A FET is a better chopper than a BJT because it has ? | |
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higher input impedance
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lower input current
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lower off-set voltage
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higher series ON resistance
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| 5. | In a JFET drain current is maximum when VGS is ? | |
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equal to Vp
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positive
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zero
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negative
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| 6. | The shape of the transfer characteristic of JFET is very nearly a ? | |
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parabola
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hyperbola
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straight line
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none of the above
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| 7. | A junction FET, can be used as a voltage variable resistor ? | |
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beyond pinch-off voltage
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well below pinch-off condition
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for any value of VDS
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at pinch-off condition
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| 8. | While BJT is a ......... controlled device. MOS is a ......... controlled device ? | |
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majority carrier; minority carrier
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minority carrier; majority carrier
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current; voltage
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charge; electron
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| 9. | MOSFET can be used as a ? | |
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voltage controlled inductor
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current controlled inductor
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voltage controlled capacitor
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current controlled capacitor
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| 10. | The MOS equivalent of common collector amplifier ? | |
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common source amplifier
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common gate amplifier
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common drain amplifier
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emitter follower amplifier
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