| 1. | Write the incorrect statement. A Schottky diode ? | |
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is a bipolar device
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has fast recovery time
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has no depletion layer
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has metal semiconductor
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Report Question| 2. | In forward region of its characteristics, a diode appears as ? | |
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an OFF switch
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an ON switch
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an high resistor
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a capacitor
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| 3. | The de current gain (D) of BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is ? | |
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0.995
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0.990
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0.980
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0.985
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| 4. | Compared to the bipolar junction transistor, a JFET: 1. has a larger gain bandwidth production. 2 is less noisy. 3. has less input resistance. 4, has current flow due to only majority carriers ? | |
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2 and 4 are correct
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1,2,3 and 4 are correct
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3 and 4 are correct
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1 and 2 are correct
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| 5. | In a JFET, increase in applied external bias to the gate causes ? | |
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decrease in channel resistance
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increase in drain current
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decrease in drain current to achieve pinch-off voltage
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decrease in size of depletion regions
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| 6. | The effective channel length of a MOSFET in saturation decreases with increase in ? | |
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drain voltage
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gate voltage
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body voltage
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source voltage
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| 7. | The conduction loss versus device current characteristic of a power MOSFET is best approximated by ? | |
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an exponentially decaying function
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a parabola
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a rectangular hyperbola
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a straight line
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| 8. | A CMOS amplifier when compared to an N-channel MOSFET. has the advantage of ? | |
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higher current gain
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higher voltage gain
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lower current drain from the power supply, thereby less dissipation
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higher cut-off frequency
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| 9. | In an integrated circuit, the SiO, layer provides ? | |
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conducting path
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electrical connection to external circuit
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physical strength
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isolation
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| 10. | Thin gate oxide in a CMOS process is preferably grown using ? | |
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dry oxidation
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ion implantation
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epitaxial deposition
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wet oxidation
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