| 1. | h-parameters of a transistor ? | |
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vary with temperature
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are constant
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are dependent upon collector current
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None of the above
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Report Question| 2. | For a transistor, turn-off time is ? | |
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Maximum value of storage time
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Sum of rise time and fall time
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Sum of storage time and fall time
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Maximum value of fall time
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| 3. | A FET ? | |
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uses a high-concentration emitter junction
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incorporates a forward-biased junction
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depends on the variation of the depletion layer width with reverse voltage for its operation
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depends on the variation of a magnetic field for its operation
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| 4. | Which one of the following statements is NOT correct for a MOSFET ? | |
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Are easy to parallel for higher current
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Have more linear characteristic
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Leakage current is relatively high
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Overload and peak current handling capability are high
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| 5. | For a given emitter current, the collector current can be increased by ? | |
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doping the emitter region lightly
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making the base region more wider
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reducing the recombination rate in the base region
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reducing the minority carrier mobility in the base region
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| 6. | Which of the following statements is correct ? | |
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Emitter region is of high resistivity and heavily doped
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Emitter region is of high resistivity material and lightly doped
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Base region is of low resistivity material and heavily depend
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Collector region is of higher conductivity than emitter
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| 7. | Which one of the following statements is correct, Under small signal operation of a diode ? | |
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it acts like a closed switch
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its bulk resistance increases
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it behaves as a clipper
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its junction resistance predominates
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| 8. | In P-N junction the avalanche breakdown voltage with semiconductor resistivity ? | |
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increases
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decreases or increases in abrupt P-N junction
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both the parameters are independent
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decreases
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| 9. | In a semiconductor diode schematic symbol arrow head represents ? | |
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both P and N type materials
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N-type material
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P-type material
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none of the above
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| 10. | The diffusion capacitance of a forward biased P+-N junction diode with a steady current I depends on ? | |
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junction area
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width of the depletion region
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mean lifetime of holes
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mean lifetime of electrons
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