1. Almost all resistors are made in a monolithic integrated circuit ?

during the base diffusion

while growing the epitaxial layer

during the collector diffusion

during the emitter diffusion

Answer: during the base diffusion

Explanation:


2. In a JFET, drain current is primarily controlled by ?

voltage drop across channel

size of depletion region

gate reverse bias

channel resistance

Answer: gate reverse bias

Explanation:


3. How can the channel width in a junction field effect transistor be controlled ?

By the length of the source

By the length of both the source and the drain

By the length of the drain

By two back-biased p-n junctions

Answer: By two back-biased p-n junctions

Explanation:


4. For the operation of N-channel E-MOSFET it is necessary that gate voltage is ?

highly positive

low positive

zero

highly negative

Answer: highly positive

Explanation:


5. In a MOSFET, the transfer characteristics can be used to determine which of the following device parameters ?

Threshold voltage and transconductance

Threshold voltage and output resistance

Transconductance and output resistance

Transconductance and channel length modulation parameters

Answer: Threshold voltage and transconductance

Explanation:


6. Body effect in MOSFETs results in ?

decrease in the value of transconductance

increase in the value of output resistance

change in the value of threshold voltage

increase in the value of transconductance

Answer: change in the value of threshold voltage

Explanation:


7. In a CMOS CS amplifier, the active load is obtained by connecting ?

n-channel transistor

p-channel current mirror circuit

BJT current mirror

p-channel transistor

Answer: p-channel current mirror circuit

Explanation:


8. The extremely high input impedance of a MOSFET is primarily because of ?

-ve Vgs

absence of its channel

depletion of current carriers

extremely small leakage current of its gate capacitor

Answer: extremely small leakage current of its gate capacitor

Explanation:


9. In n-channel enhancement MOSFET, at a fixed drain voltage ?

the drain current is zero for negative bias voltage to gate and it increases as the negative gate bins is decreased in magnitude

the drain current is maximum at zero gate voltage and it decreases with applied negative gate voltage

the drain current has a finite value at zero gate voltage and it increases or decreases with the applied voltage of proper polarity

the drain current is zero at zero gate voltage and it increases with the positive applied gate voltage

Answer: the drain current is zero at zero gate voltage and it increases with the positive applied gate voltage

Explanation:


10. Which of the following devices is used in the microprocessors ?

CMOS

JFET

MOSFET

BJT

Answer: MOSFET

Explanation: