1. What is the reverse recovery time of a diode when switched from forward bias V to reverse bias V ?

Time to remove stored minority carriers plus the time to bring the diode voltage to reverse bias V

Time taken by the diode current to reverse

Time taken by the diode voltage to attain zero value

Time taken to remove the stored minority carriers

Answer: Time taken to remove the stored minority carriers

Explanation:


2. The minority carrier lifetime and diffusion constant in a semiconducting material are respectively 100 microsecond and 100 cm/s. The diffusion length of the carriers is ?

1 cm

0.1 cm

0.0141 cm

0.01 cm

Answer: 0.1 cm

Explanation:


3. The change in barrier potential of a silicon p-n junction with temperature is ?

0.014 volts per degree C

0.025 volts per degree C

0.250 volts per degree C

0.030 volts per degree C

Answer: 0.025 volts per degree C

Explanation:


4. The diffusion length for holes Lp, is the ?

length of the region in which diffusion takes place

average distance which an injected hole travels before recombining with an electron

maximum distance travelled by a hole before recombining with an electron

minimum distance travelled by a hole before it recombines with an electron

Answer: average distance which an injected hole travels before recombining with an electron

Explanation:


5. For heavily doped diode ?

Avalanche breakdown is likely to take place

Zener breakdown is likely to take place

either (a) or (b) will take place

neither (a) nor (b) will take place

Answer: Zener breakdown is likely to take place

Explanation:


6. A combination of two diodes connected in parallel when compared to a single diode can withstand ?

twice the value of peak inverse voltage

twice the value of cut-in voltage

twice the value of maximum forward current

a larger leakage current

Answer: twice the value of maximum forward current

Explanation:


7. Negative resistance region of a silicon Esaki diode remains the same even at a temperature of ?

150°C

50°C

200°C

100°C

Answer: 50°C

Explanation:


8. Thermistors are essentially semiconductors ?

which behave as resistors with a high negative temperature coefficient of resistance

well suited to precision measurement of temperature

widely used in the lower temperature range of -100°C to 300°C

all of the above

Answer: all of the above

Explanation:


9. The symbol a in terms of BJT denotes ?

ratio of Ie and Ic

ratio of Ic and Ie

ratio of Ib and Ic

ratio of Vbe and VCE

Answer: ratio of Ic and Ie

Explanation:


10. The Ebers-Moll model is applicable ?

junction field-effect transistors

unipolar junction transistors

bipolar junction transistors

NMOS transistors

Answer: junction field-effect transistors

Explanation: