| 1. | What is the reverse recovery time of a diode when switched from forward bias V to reverse bias V ? | |
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Time to remove stored minority carriers plus the time to bring the diode voltage to reverse bias V
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Time taken by the diode current to reverse
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Time taken by the diode voltage to attain zero value
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Time taken to remove the stored minority carriers
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Report Question| 2. | The minority carrier lifetime and diffusion constant in a semiconducting material are respectively 100 microsecond and 100 cm/s. The diffusion length of the carriers is ? | |
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1 cm
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0.1 cm
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0.0141 cm
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0.01 cm
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| 3. | The change in barrier potential of a silicon p-n junction with temperature is ? | |
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0.014 volts per degree C
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0.025 volts per degree C
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0.250 volts per degree C
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0.030 volts per degree C
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| 4. | The diffusion length for holes Lp, is the ? | |
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length of the region in which diffusion takes place
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average distance which an injected hole travels before recombining with an electron
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maximum distance travelled by a hole before recombining with an electron
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minimum distance travelled by a hole before it recombines with an electron
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| 5. | For heavily doped diode ? | |
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Avalanche breakdown is likely to take place
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Zener breakdown is likely to take place
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either (a) or (b) will take place
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neither (a) nor (b) will take place
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| 6. | A combination of two diodes connected in parallel when compared to a single diode can withstand ? | |
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twice the value of peak inverse voltage
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twice the value of cut-in voltage
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twice the value of maximum forward current
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a larger leakage current
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| 7. | Negative resistance region of a silicon Esaki diode remains the same even at a temperature of ? | |
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150°C
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50°C
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200°C
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100°C
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| 8. | Thermistors are essentially semiconductors ? | |
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which behave as resistors with a high negative temperature coefficient of resistance
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well suited to precision measurement of temperature
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widely used in the lower temperature range of -100°C to 300°C
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all of the above
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| 9. | The symbol a in terms of BJT denotes ? | |
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ratio of Ie and Ic
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ratio of Ic and Ie
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ratio of Ib and Ic
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ratio of Vbe and VCE
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| 10. | The Ebers-Moll model is applicable ? | |
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junction field-effect transistors
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unipolar junction transistors
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bipolar junction transistors
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NMOS transistors
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