| 1. | Comparing the size of BJT and FET, choose the correct statement ? | |
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BJT is larger than the FET
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BJT is smaller than the FET
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Both are of same size
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Depends on application
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Report Question| 2. | In the constant-current region, how will the IDS change in an n-channel JFET ? | |
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As VGS decreases ID decreases
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As VGS increases ID increases
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As VGS decreases ID remains constant
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As VGS increases ID remains constant
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| 3. | The common-source JFET amplifier has ? | |
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a very high input impedance and a relatively low voltage gain
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a high input impedance and a very high voltage gain
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a high input impedance and a voltage gain less than 1
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no voltage gain
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| 4. | For a FET when will maximum current flows ? | |
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Vgs = 0V
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Vgs = 0v and Vds >= |Vp|
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VDS >= |Vp|
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Vp = 0
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| 5. | When is a vertical channel E-MOSFET used ? | |
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for high frequencies
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for high voltages
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for high currents
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for high resistances
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| 6. | Which of the following is not the main characteristic of FET ? | |
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Amplification factor
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Forward transconductance
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Temperature factor
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None of the above
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| 7. | To use FET as a voltage controlled resistor, in which region it should operate ? | |
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Ohmic region
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cut off
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Saturation
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cut off and saturation
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| 8. | The primary control on drain current in a JFET is exerted by which of the following ? | |
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Gate reverse bias
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Size of depletion regions
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Voltage drop across channel
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Channel resistance
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| 9. | The overall input capacitance of a dual-gate D-MOSFET is lower because the devices are usually connected ? | |
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in parallel
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with separate insulation
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with separate inputs
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in series
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| 10. | The type of bias most often used with E-MOSFET circuits is ? | |
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constant current
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drain-feedback
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voltage-divider
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zero biasing
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