1. Under normal reverse bias voltage applied to diode, the reverse current in Si diode ?

100 mA

order of ?A

1000 ?A

None of these

Answer: order of ?A

Explanation:


2. Avalanche breakdown in a diode occurs when ?

Potential barrier is reduced to zero

Forward current exceeds certain value

Reverse bias exceeds a certain value

None of these

Answer: Reverse bias exceeds a certain value

Explanation:


3. Reverse saturation current in a Silicon PN junction diode nearly doubles for very ?

20 rise in temp

50 rise in temp

60 rise in temp

100 rise in temp

Answer: 100 rise in temp

Explanation:


4. What diode operates only with majority carriers ?

laser

tunnel

Schottky

step-recovery

Answer: Schottky

Explanation:


5. A forward potential of 10V is applied to a Si diode. A resistance of 1 K? is also in series with the diode. The current is ?

10 mA

9.3 mA

0.7 mA

0

Answer: 9.3 mA

Explanation:


6. In the diode equation, the voltage equivalent of temperature is ?

11600/T

T/11600

T x 11600

11600/T2

Answer: T/11600

Explanation:


7. Barrier potential at the room tem. (250 C) is 0.7V, its value at 1250 C is ?

0.5 V

0.3 V

0.9 V

0.7 V

Answer: 0.5 V

Explanation:


8. When a reverse bias is applied to a diode, it will ?

Raise the potential barrier

Lower the potential barrier

Increases the majority-carrier a current greatly

None of these

Answer: Raise the potential barrier

Explanation:


9. Which diode employs graded doping ?

zener

LED

tunnel

step-recovery

Answer: step-recovery

Explanation:


10. Most of the electrons that flow through the base will ?

Flow into the collector

Flow out of the base lead

Recombine with base holes

Recombine with collector holes

Answer: Flow into the collector

Explanation: