| 1. | Under normal reverse bias voltage applied to diode, the reverse current in Si diode ? | |
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100 mA
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order of ?A
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1000 ?A
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None of these
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Report Question| 2. | Avalanche breakdown in a diode occurs when ? | |
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Potential barrier is reduced to zero
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Forward current exceeds certain value
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Reverse bias exceeds a certain value
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None of these
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| 3. | Reverse saturation current in a Silicon PN junction diode nearly doubles for very ? | |
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20 rise in temp
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50 rise in temp
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60 rise in temp
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100 rise in temp
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| 4. | What diode operates only with majority carriers ? | |
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laser
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tunnel
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Schottky
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step-recovery
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| 5. | A forward potential of 10V is applied to a Si diode. A resistance of 1 K? is also in series with the diode. The current is ? | |
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10 mA
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9.3 mA
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0.7 mA
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0
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| 6. | In the diode equation, the voltage equivalent of temperature is ? | |
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11600/T
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T/11600
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T x 11600
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11600/T2
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| 7. | Barrier potential at the room tem. (250 C) is 0.7V, its value at 1250 C is ? | |
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0.5 V
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0.3 V
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0.9 V
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0.7 V
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| 8. | When a reverse bias is applied to a diode, it will ? | |
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Raise the potential barrier
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Lower the potential barrier
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Increases the majority-carrier a current greatly
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None of these
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| 9. | Which diode employs graded doping ? | |
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zener
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LED
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tunnel
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step-recovery
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| 10. | Most of the electrons that flow through the base will ? | |
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Flow into the collector
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Flow out of the base lead
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Recombine with base holes
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Recombine with collector holes
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