| 1. | Magnitude of ? is ? | |
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< 1
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> 1
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< 0
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None of the above
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View Answer
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Report Question| 2. | When a junction transistor is operated under saturated conditions ? | |
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Both the CB and EB junction are forward-biased
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The CB junction is forward-biased but the EB junction is reverse biased
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The CB junction is reverse-biased but the EB junction is forward-biased
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None of the above
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| 3. | When the current gain increases from 50 to 300 in an emitter-biased circuit, the collector current ? | |
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Remains almost the same
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Decreases by a factor of 6
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Increases by a factor of 6
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Is zero
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| 4. | Which configuration of bipolar transistors of similar geometry has the highest current gain, bandwidth product for ? | |
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n-p-n Ge transistor
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p-n-p Si transistor
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p-n-p Ge transistor
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n-p-n Si transistor
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| 5. | Base-to-emitter voltage is forward-biased transistor decreases with the increase of temperature at the following rate ? | |
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2.5 mv/C
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25 mv/C
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0.25 mv/C
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0.6 m/C
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| 6. | The Early Effect in a bipolar transistor is caused by ? | |
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Base width modulation
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Large collector-base reverse-bias
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Large emitter-base forward-bias
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Increase in junction temperature
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| 7. | The most commonly used transistor circuit arrangement is ? | |
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Common base
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Common emitter
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Common collector
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None of these
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| 8. | The emitter current in a Junction with normal bias ? | |
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Is almost equal to base current
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Is equal to the sum of IB and IC
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Changes greatly by small change in collector bias voltage
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Is equal to ICBO
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| 9. | The Silicon transistor are more widely used then Germanium transistor because ? | |
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They have smaller leakage current
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They have better ability to dissipate heat
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They have smaller depletion layers
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They have larger the current carrying capacity
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| 10. | The current Icbo flows in the ? | |
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Emitter and base leads
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Collector and base leads
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Emitter and collector leads
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None of these
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