| 1. | N-channel FETs are superior to P-channel FETs because ? | |
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They have a higher switching
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They have a higher input impedance
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Mobility of electron is greater than that of holes
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All of the above
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Report Question| 2. | The drain of FET is analogous to ......... of BJT ? | |
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Emitter
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Base
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Collector
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Substrate
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| 3. | The gate-source diode of a JFET should be ? | |
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Unbiased
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Reverse biased
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Forward biased
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None of the above
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| 4. | The drain current of the N-channel JFET increases with ? | |
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Increasing positive voltage at the gate
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Constant voltage at the gate
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Decreasing positive voltage at the gate
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None of the above
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| 5. | The transconductance curve of a JFET is a graph of ? | |
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IS versus VDS
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IC versus VCE
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ID versus VGS
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ID × RDS
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| 6. | FETs are preferred to BJTs at high frequencies because they are ? | |
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Less noisy
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Capable of handling highest frequencies
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Easy to fabricate
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All of the above
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| 7. | A FET can be used as a variable ? | |
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Inductor
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Capacitor
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Resistor
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Voltage source
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| 8. | Which component is considered to be an "OFF" device ? | |
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transistor
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JFET
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D-MOSFET
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E-MOSFET
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| 9. | FET acts as constant current source in ? | |
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Ohmic region
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Breakdown region
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Pinch off region
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Both (B and (C)
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| 10. | A FET, for its operation, depends on the variation of ? | |
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Forward-biased junction
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Reversed-biased junction
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Magnetic field
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The depletion-layer width with reverse voltage
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