| 1. | The reverse current of a silicon diode is ? | |
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Both bias voltage and temperature sensitive
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Highly bias voltage sensitive
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Highly temperature sensitive
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Independent of bias voltage and temperature
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Report Question| 2. | The ac resistance of a forward-biased p-n junction diode operating at a bias voltage 'V' and carrying current 'I' is ? | |
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?V/?I
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zero
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a constant value independent of V and I
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V/I
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| 3. | Silicon devices are preferred at high temperature operations comparison to germanium because ? | |
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silicon can dissipate more power
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reverse saturation current is less in case of silicon
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silicon is more thermally stable
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none of the above
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| 4. | As the temperature is increased, the voltage across a diode carrying a constant current ? | |
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remains constant
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increases
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decreases
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may increase or decrease depending on the doping levels in the junction
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| 5. | What is the typical value for the ratio of current in a p-n junction diode in the forward bias and that in the reverse bias ? | |
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1
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10
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100
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1000
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| 6. | A p-n junction diode's dynamic conductance is directly proportional to ? | |
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the applied voltage
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its current
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the temperature
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the thermal voltage
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| 7. | The voltage stability with time of reference diodes incorporating Zener diodes is comparable to that of which of the following ? | |
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Dry cells
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Conventional standard cells
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Nickel-cadmium cells
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Lead-acid accumulator batteries
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| 8. | In a tunnel diode, the width of the depletion layer is of the order of ? | |
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1.0 micron
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0.1 micron
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100 armstrong
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0.1 armstrong
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| 9. | The negative resistance in a tunnel diode ? | |
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is maximum at the valley point
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is maximum at the peak point of the characteristic
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may be improved by the use of reverse bias
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is available between the peak and valley points
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| 10. | A PIN diode is frequently used as a ? | |
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switching diode for frequencies up to GHz range
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peak clipper
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voltage regulator
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harmonic generator
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